The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2020
Filed:
Oct. 16, 2018
Visual Photonics Epitaxy Co., Ltd., Taoyuan, TW;
Yu-Chung Chin, Taoyuan, TW;
Chao-Hsing Huang, Taoyuan, TW;
Min-Nan Tseng, New Taipei, TW;
Kai-Yu Chen, Taoyuan, TW;
VISUAL PHOTONICS EPITAXY CO., LTD., Taoyuan, TW;
Abstract
The disclosure provides an HBT structure with bandgap graded hole barrier layer, comprising: a sub-collector layer, a collector layer, a hole barrier layer, a base layer, an emitter layer, an emitter cap layer, and an ohmic contact layer, all stacked sequentially on a substrate; with the hole barrier layer formed of at least one of AlGaAs, AlGaAsN, AlGaAsP, AlGaAsSb, and InAlGaAs, Aluminum composition being less than 22%, and In, N, P, and Sb compositions being respectively less than or equal to 10%; wherein bandgaps of the hole barrier layer at least comprise a gradually increasing bandgap from the base layer towards the collector layer and the largest bandgap of the hole barrier layer is greater than bandgaps of the base layer and the collector layer.