Taipei, Taiwan

Min-Nan Tseng


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Location History:

  • Jhonghe, TW (2007)
  • New Taipei, TW (2017 - 2021)
  • Taoyuan, TW (2021)

Company Filing History:


Years Active: 2007-2021

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6 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Min-Nan Tseng in Heterojunction Bipolar Transistors

Introduction

Min-Nan Tseng, an accomplished inventor based in New Taipei, Taiwan, has made significant strides in the field of semiconductor technology. With a total of six patents to his name, Tseng focuses on enhancing the performance and ruggedness of heterojunction bipolar transistors (HBTs), which are critical components in modern electronic devices.

Latest Patents

Among Tseng's latest innovations are two notable patents that emphasize high ruggedness heterojunction bipolar transistors. The first patent describes a HBT designed with a first and a second emitter cap layer strategically positioned between an emitter layer and an ohmic contact layer. This innovative structure alters the bandgaps of the emitter cap layers, thereby improving the ruggedness of the HBT. The second patent reveals a comprehensive HBT structure consisting of multiple layers made from N-type and P-type III-V semiconductor materials. This design includes an emitter cap layer that enhances the electronic properties of the transistor, further optimizing its overall performance and reliability.

Career Highlights

Min-Nan Tseng is currently associated with Visual Photonics Epitaxy Co., Ltd., where he utilizes his expertise to pioneer advancements in semiconductor device technologies. His work significantly contributes to the development of high-performance transistors that meet the demands of modern electronics.

Collaborations

Throughout his career, Tseng has collaborated with talented colleagues such as Yu-Chung Chin and Chao-Hsing Huang. These professional partnerships have facilitated knowledge exchange and have led to the successful execution of innovative projects in the semiconductor industry.

Conclusion

With his expertise and groundbreaking contributions to heterojunction bipolar transistors, Min-Nan Tseng stands out as a leading inventor in the field. His ongoing innovations are set to lead the future of semiconductor technology, ensuring that devices become increasingly efficient and robust.

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