The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2007
Filed:
Sep. 03, 2004
Chao-hsing Huang, Mingjian Township, Nantou County, TW;
Yu-chung Chin, Jhongli, TW;
Min-nan Tseng, Jhonghe, TW;
Huai-tung Yang, Taipei, TW;
Kun-chuan Lin, Taipei, TW;
Shih-jane Tsai, Dajia Township, Taichung County, TW;
Chao-Hsing Huang, Mingjian Township, Nantou County, TW;
Yu-Chung Chin, Jhongli, TW;
Min-Nan Tseng, Jhonghe, TW;
Huai-Tung Yang, Taipei, TW;
Kun-Chuan Lin, Taipei, TW;
Shih-Jane Tsai, Dajia Township, Taichung County, TW;
Visual Photonics Epitaxy Co., Ltd., Taoyuan, TW;
Abstract
A material made by arranging layers of gallium-arsenide-antimonide (GaAsSb, 0.0≦x≦1.0) and/or indium-gallium-arsenic-nitride (InGaAsN, 0.0≦y, z≦1.0) in a specific order is used to form the transistor base of a heterojunction bipolar transistor. By controlling the compositions of the materials indium-gallium-arsenic-nitride and gallium-arsenide-antimonide, and by changing the thickness and order of the layers, the new material would possess a specific energy gap, which in turn determines the base-emitter turn-on voltage of the heterojunction bipolar transistor.