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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9853136 B1

PDFFull Text
Date of Patent:
Dec. 26, 2017

Filed:

Nov. 07, 2014

Directed epitaxial heterojunction bipolar transistor

Applicant:

Visual Photonics Epitaxy Co., Ltd., Taoyuan, TW;

Inventors:

Yu-Chung Chin, New Taipei, TW;

Chao-Hsing Huang, Taipei, TW;

Min-Nan Tseng, New Taipei, TW;

Assignee:

VISUAL PHOTONICS EPITAXY CO., LTD., Taoyuan, TW;

Attorney:

Lin & Associates Intellectual Property, Inc.

Primary Examiner:

Thao X Le

Assistant Examiner:

Geoffrey Ida

Int. Cl.
CPC ...
H01L 21/8252 (2006.01); H01L 29/737 (2006.01); H01L 27/07 (2006.01); H01L 29/205 (2006.01); H01L 29/08 (2006.01); H01L 29/201 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7378 (2013.01); H01L 21/8252 (2013.01); H01L 27/0705 (2013.01); H01L 27/0716 (2013.01); H01L 29/0821 (2013.01); H01L 29/201 (2013.01); H01L 29/205 (2013.01); H01L 27/0623 (2013.01);
Abstract

A directed epitaxial heterojunction bipolar transistor (HBT) structure is directly or indirectly formed on a GaAs substrate that is formed by a (100) face towards a (111)B face with an angle of inclination between 0.6° and 25°, and includes a sub-collector layer, a collector, a base layer, an emitter layer, an emitter cap layer and an ohmic contact layer, which are sequentially formed on the substrate. A tunnel collector layer formed by InGaP or InGaAsP is provided between the collector layer and the base layer. Since an epitaxial process is performed on the substrate from a (100) face towards a (111)B face with an angle of inclination between 0.6° and 25°, indium and gallium contained in InGaP or InGaAsP are affected by the ordering effect such that InGaP or InGaAsP used in the emitter layer and/or the tunnel collector layer has a higher electron affinity or a smaller bandgap.

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