The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2021
Filed:
Mar. 05, 2020
Visual Photonics Epitaxy Co., Ltd., Taoyuan, TW;
Chao-Hsing Huang, Taoyuan, TW;
Yu-Chung Chin, Taoyuan, TW;
Min-Nan Tseng, Taoyuan, TW;
Kai-Yu Chen, Taoyuan, TW;
VISUAL PHOTONICS EPITAXY CO., LTD., Taoyuan, TW;
Abstract
Provided is a high ruggedness HBT, including a first emitter cap layer and a second emitter cap layer formed between an emitter layer and an ohmic contact layer, or only an emitter cap layer is formed between them. When the first and second emitter cap layers are provided, bandgaps of the first or second emitter cap layer are changed, and the ruggedness of the HBT is improved. When an emitter cap layer is provided, an electron affinity of at least a portion of the emitter cap layer is less than or approximately equal to an electron affinity of the emitter layer, and the ruggedness of the HBT is improved.