Zhiqiang Xie

Title: Zhiqiang Xie: Innovator in Semiconductor Technology

Introduction

Zhiqiang Xie is a prominent inventor based in Meridian, Idaho, known for his significant contributions to semiconductor technology. With a total of 11 patents to his name, he has made remarkable advancements in methods and systems related to semiconductor formation.

Latest Patents

One of Zhiqiang Xie's latest patents focuses on semiconductor formation using hybrid oxidation. This patent describes methods, apparatuses, and systems for forming a semiconductor by creating an isolation region in a semiconductor substrate. The method includes depositing a first dielectric into the isolation region at a first oxidation rate, followed by depositing a second dielectric at a second oxidation rate. Another notable patent involves a device that comprises an array of elevationally-extending transistors and a circuit structure that is adjacent and electrically coupled to these transistors. This circuit structure features a stair-step design with vertically-alternating tiers of conductive steps, which are separated by insulative material. The device also includes conductive vias that extend through the conductive steps to connect with electronic components below.

Career Highlights

Zhiqiang Xie has worked with leading technology companies, including Micron Technology Incorporated and Intel Corporation. His experience in these organizations has allowed him to develop innovative solutions that enhance semiconductor technology.

Collaborations

Throughout his career, Zhiqiang has collaborated with notable professionals in the field, including Anish A Khandekar and Justin B Dorhout. These collaborations have contributed to the advancement of semiconductor technologies and the successful development of his patents.

Conclusion

Zhiqiang Xie's work in semiconductor technology exemplifies innovation and dedication to advancing the field. His patents and collaborations reflect his commitment to improving electronic components and circuit structures.