The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 02, 2021

Filed:

Mar. 26, 2019
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Anish Khandekar, Boise, ID (US);

Lars P. Heineck, Boise, ID (US);

Silvia Borsari, Boise, ID (US);

Zhiqiang Xie, Meridian, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76832 (2013.01); H01L 21/76831 (2013.01); H01L 21/31116 (2013.01);
Abstract

Methods, apparatuses, and systems related to selectively depositing a liner material on a sidewall of an opening are described. An example method includes forming a liner material on a dielectric material of sidewalls of an opening and a bottom surface of an opening and removing the first liner material of the sidewalls of the opening and the bottom surface of the opening using a non-selective etch chemistry. The example method further includes forming a second liner material on the dielectric material of the sidewalls of the opening to avoid contact with the bottom surface of the opening.


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