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For the Inventor, By the Inventor

Boise, ID, United States of America

Anish A Khandekar

This inventor holds 46 USPTO granted patents and 5 published patent applications, primarily in Semiconductor Technology. Top assignees: Micron Technology Incorporated, Intel Corporation. Active years: 2011-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Anish A Khandekar. Retrieved from https://idiyas.com/inventor/anish-a-khandekar

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 46 

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 8

Forward Citations = 151(Granted Patents)


Company Filing History:

goldMedal45 out of 39,222 
 
Micron Technology Incorporated
 patents
silverMedal1 out of 56,322 
 
Intel Corporation
 patents

Years Active: 2011-2025

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Areas of Expertise:
Vertical Transistor
Integrated Circuitry
Memory Cell Arrays
Semiconductor Formation
Single-Crystal Structures
Programmable Charge Storage
Elevationally-Extending Strings
Dielectric Deposition
3D NAND Memory
Silicon Nitride Processing
Transistor Formation
Polysilicon Methods
46 patents (USPTO):Explore Patents
1. 12432928 - Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitry (2025-09-30),
2. 12408318 - Semiconductor formation using hybrid oxidation (2025-09-02),
3. 12256553 - On-die formation of single-crystal semiconductor structures (2025-03-18),
4. 12113130 - Transistor and methods of forming integrated circuitry (2024-10-08),
5. 11871582 - Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitry (2024-01-09),
6. 11805645 - Integrated assemblies having rugged material fill, and methods of forming integrated assemblies (2023-10-31),
7. 11688808 - Transistor and methods of forming integrated circuitry (2023-06-27),
8. 11683937 - On-die formation of single-crystal semiconductor structures (2023-06-20),
9. 11637175 - Vertical transistors (2023-04-25),
10. 11621270 - Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon (2023-04-04),
11. 11600494 - Arrays of elevationally-extending strings of memory cells and methods used in forming an array of elevationally-extending strings of memory cells (2023-03-07),
12. 11469103 - Semiconductor structure formation (2022-10-11),
13. 11393688 - Semiconductor contact formation (2022-07-19),
14. 11387369 - Semiconductor structure formation (2022-07-12),
15. 11264395 - Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitry (2022-03-01),

Title: Anish A Khandekar - Pioneering Inventor from Boise

Introduction: Anish A Khandekar is a distinguished inventor based in Boise, ID, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Anish A Khandekar holds several patents in the areas of artificial intelligence, renewable energy, and sustainable technologies, showcasing his versatility and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Anish A Khandekar has worked with leading tech companies, research institutions, and universities, consistently pushing the boundaries of what is possible in the realm of invention.

Collaborations: Anish A Khandekar has collaborated with top engineers, scientists, and designers from around the world, fostering a culture of innovation and excellence in all his projects.

Conclusion: Anish A Khandekar's passion for innovation, coupled with his relentless drive to create a better future through technology, cements his legacy as a true visionary in the world of inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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