The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2024
Filed:
Jan. 31, 2022
Micron Technology, Inc., Boise, ID (US);
Hung-Wei Liu, Meridian, ID (US);
Vassil N. Antonov, Boise, ID (US);
Ashonita A. Chavan, Boise, ID (US);
Darwin Franseda Fan, Boise, ID (US);
Jeffery B. Hull, Boise, ID (US);
Anish A. Khandekar, Boise, ID (US);
Masihhur R. Laskar, Boise, ID (US);
Albert Liao, Boise, ID (US);
Xue-Feng Lin, Boise, ID (US);
Manuj Nahar, Boise, ID (US);
Irina V. Vasilyeva, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A method of forming a vertical transistor comprising a top source/drain region, a bottom source/drain region, a channel region vertically between the top and bottom source/drain regions, and a gate operatively laterally-adjacent the channel region comprises, in multiple time-spaced microwave annealing steps, microwave annealing at least the channel region. The multiple time-spaced microwave annealing steps reduce average concentration of elemental-form H in the channel region from what it was before start of the multiple time-spaced microwave annealing steps. The reduced average concentration of elemental-form H is 0.005 to less than 1 atomic percent. Structure embodiments are disclosed.