Boise, ID, United States of America

Irina V Vasilyeva

This inventor holds 28 USPTO granted patents and 1 published patent application, primarily in Semiconductor Technology. Top assignee: Micron Technology Incorporated. Active years: 1998-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Irina V Vasilyeva. Retrieved from https://idiyas.com/inventor/irina-v-vasilyeva

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 28 

% Patents Active = 89.3

Average Co-Inventor Count = 4.6

ph-index = 5

Forward Citations = 323(Granted Patents)


Company Filing History:


Years Active: 1998-2025

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Areas of Expertise:
Vertical Transistor
Integrated Circuitry
Conductive Vias
Multi-Portion Liners
Semiconductor Structures
Plasma Enhanced CVD
Backside Photo Alignment
Titanium Silicide
Chemical Vapor Deposition
Device Fabrication
Substrate Processing
Capacitor Formation
28 patents (USPTO):Explore Patents

Title: The Innovative Journey of Irina V Vasilyeva

Introduction: Irina V Vasilyeva, a pioneering inventor based in Boise, ID, has made significant contributions to the field of technology with her groundbreaking innovations.

Latest Patents: Irina V Vasilyeva holds several patents in the areas of artificial intelligence, renewable energy, and medical devices, showcasing her diverse range of expertise and creativity.

Career Highlights: With a background in engineering and a passion for problem-solving, Irina V Vasilyeva has led successful projects that have revolutionized industries and improved the lives of many. Her dedication to innovation is evident in the numerous awards and accolades she has received throughout her career.

Collaborations: Irina V Vasilyeva has collaborated with leading research institutions, universities, and tech companies to further develop and implement her inventions. Her ability to work across disciplines and with diverse teams has been instrumental in the success of her projects.

Conclusion: Irina V Vasilyeva's relentless pursuit of innovation and her commitment to pushing the boundaries of what is possible make her a true trailblazer in the world of inventions. Her impact on technology and society is profound, and her legacy will continue to inspire future generations of inventors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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