The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2022

Filed:

Sep. 15, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Zhuo Chen, Boise, ID (US);

Irina V. Vasilyeva, Boise, ID (US);

Darwin Franseda Fan, Boise, ID (US);

Kamal Kumar Muthukrishnan, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 27/108 (2006.01); H01L 27/11504 (2017.01); H01L 21/48 (2006.01); H01L 27/11507 (2017.01); H01L 27/11509 (2017.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/4814 (2013.01); H01L 27/10814 (2013.01); H01L 27/10855 (2013.01); H01L 27/10897 (2013.01); H01L 27/11504 (2013.01); H01L 27/11507 (2013.01); H01L 27/11509 (2013.01);
Abstract

Some embodiments include a method of forming an integrated assembly. Semiconductor material is patterned into a configuration which includes a set of first upwardly-projecting structures spaced from one another by first gaps, and a second upwardly-projecting structure spaced from the set by a second gap. The second gap is larger than the first gaps. Conductive material is formed along the first and second upwardly-projecting structures and within the first and second gaps. First and second segments of protective material are formed over regions of the conductive material within the second gap, and then an etch is utilized to pattern the conductive material into first conductive structures within the first gaps and into second conductive structures within the second gap. Some embodiments include integrated assemblies.


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