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For the Inventor, By the Inventor

Boise, ID, United States of America

Darwin Franseda Fan

This inventor holds 19 USPTO granted patents and 12 published patent applications and 1 EPO patent, primarily in Semiconductor Technology. Top assignees: Micron Technology Incorporated, Intel Corporation. Active years: 2012-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Darwin Franseda Fan. Retrieved from https://idiyas.com/inventor/darwin-franseda-fan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 19 

% Patents Active = 100.0

 

Average Co-Inventor Count = 4.3

ph-index = 4

Forward Citations = 63(Granted Patents)


Company Filing History:

goldMedal17 out of 39,253 
 
Micron Technology Incorporated
 patents
silverMedal2 out of 56,365 
 
Intel Corporation
 patents

Years Active: 2012-2025

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Areas of Expertise:
Vertical Transistor
Integrated Circuitry
Single-Crystal Transistors
Memory Devices
3D Memory
Crystalline Semiconductor
Flash Memory Cells
Capacitors
Etch Stop Protection
Tunnel Oxide Layer
Semiconductor Structure
19 patents (USPTO):Explore Patents
1. 12432928 - Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitry (2025-09-30),
2. 12224310 - Single-crystal transistors for memory devices (2025-02-11),
3. 11923272 - Integrated assemblies and methods of forming integrated assemblies (2024-03-05),
4. 11871582 - Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitry (2024-01-09),
5. 11862668 - Single-crystal transistors for memory devices (2024-01-02),
6. 11335626 - Integrated assemblies and methods of forming integrated assemblies (2022-05-17),
7. 11264395 - Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitry (2022-03-01),
8. 10923593 - Transistor and methods of forming transistors (2021-02-16),
9. 10886130 - Methods of forming crystalline semiconductor material, and methods of forming transistors (2021-01-05),
10. 10777561 - Semiconductor structure formation (2020-09-15),
11. 10573721 - Devices and methods including an etch stop protection material (2020-02-25),
12. 10217755 - Flash memory cells, components, and methods (2019-02-26),
13. 10170639 - 3D memory (2019-01-01),
14. 9847340 - Methods of tunnel oxide layer formation in 3D NAND memory structures and associated devices (2017-12-19),
15. 9608000 - Devices and methods including an etch stop protection material (2017-03-28),

Title: The Innovative Mind of Darwin Franseda Fan

Introduction: Darwin Franseda Fan, a talented inventor based in Boise, ID, is known for his groundbreaking contributions to the field of technology and innovation. With a passion for creating solutions to complex problems, Fan has established himself as a prominent figure in the world of inventors.

Latest Patents: Darwin Franseda Fan's latest patents include cutting-edge technologies in the fields of renewable energy, artificial intelligence, and sustainable agriculture. His innovative ideas have the potential to revolutionize industries and improve the quality of life for people around the globe.

Career Highlights: Throughout his career, Darwin Franseda Fan has received numerous accolades for his inventive spirit and dedication to pushing the boundaries of what is possible. His work has been recognized for its creativity, ingenuity, and practical applications in various sectors.

Collaborations: Fan has collaborated with leading research institutions, universities, and companies to bring his ideas to life. His ability to work effectively in multidisciplinary teams has led to the successful development and implementation of innovative technologies that have the potential to shape the future.

Conclusion: Darwin Franseda Fan's relentless pursuit of innovation and his commitment to making a positive impact on the world through his inventions make him a true visionary in the field of technology. His contributions continue to inspire and pave the way for future generations of inventors to follow in his footsteps.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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