The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2020
Filed:
Mar. 27, 2017
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
John Hopkins, Meridian, ID (US);
Darwin Franseda Fan, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 27/11556 (2017.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4916 (2013.01); H01L 27/11556 (2013.01); H01L 29/40114 (2019.08); H01L 29/42324 (2013.01); H01L 29/7883 (2013.01);
Abstract
Protective dielectrics are discussed generally herein. In one or more embodiments, a three-dimensional vertical memory may include a protective dielectric material. A device may include an etch stop material, a first control gate (CG) over the etch stop material, a first CG recess adjacent the first CG, a trench adjacent the first CG recess, and an at least partially oxidized polysilicon on at least a portion of the etch stop material. The at least partially oxidized polysilicon may line a sidewall of the trench and may line the first CG recess.