The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2017
Filed:
Mar. 27, 2014
Darwin Fan, Boise, ID (US);
Sateesh Koka, Santa Clara, CA (US);
Gordon Haller, Boise, ID (US);
John Hopkins, Boise, ID (US);
Shyam Surthi, Boise, ID (US);
Anish Khandekar, Boise, ID (US);
Darwin Fan, Boise, ID (US);
Sateesh Koka, Santa Clara, CA (US);
Gordon Haller, Boise, ID (US);
John Hopkins, Boise, ID (US);
Shyam Surthi, Boise, ID (US);
Anish Khandekar, Boise, ID (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
3D NAND memory structures and related method are provided. In some embodiments such structures can include a control gate material and a floating gate material disposed between a first insulating layer and a second insulating layer, an interpoly dielectric (IPD) layer disposed between the floating gate material and control gate material such that the IPD layer electrically isolates the control gate material from the floating gate material, and a tunnel dielectric material deposited on the floating gate material opposite the control gate material.