The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2020

Filed:

Jan. 28, 2019
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Devesh Dadhich Shreeram, Boise, ID (US);

Sanjeev Sapra, Boise, ID (US);

Masihhur R. Laskar, Boise, ID (US);

Darwin Franseda Fan, Boise, ID (US);

Jerome A. Imonigie, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1087 (2013.01); H01L 27/10829 (2013.01);
Abstract

Methods, apparatuses, and systems related to reduction of tapering on a sidewall of an opening are described. An example method includes forming a silicate material comprising a gradient borophosphosilicate glass (BPSG) stack on a semiconductor structure. The example method further includes etching a portion of the silicate material to form an opening within the silicate material having sidewalls, wherein the gradient BSPG stack comprises varying concentrations of boron and phosphorous to reduce tapering of the sidewalls in response to the etching.


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