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For the Inventor, By the Inventor

Boise, ID, United States of America

Vassil N Antonov

LinkedIn
USPTO Granted Patents = 36 

 

Average Co-Inventor Count = 4.0

ph-index = 4

Forward Citations = 48(Granted Patents)


Company Filing History:

goldMedal34 out of 38,002 
 
Micron Technology Incorporated
 patents
silverMedal2 out of 2,321 
 
Nan Ya Technology Corporation
 patents

Years Active: 2011-2025

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36 patents (USPTO):Explore Patents
1. 12507395 - Doped titanium nitride materials for dram capacitors, and related semiconductor devices (2025-12-23),
2. 12432928 - Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitry (2025-09-30),
3. 12191354 - Vertical transistors having at least 50% grain boundaries offset between top and bottom source/drain regions and the channel region that is vertically therebetween (2025-01-07),
4. 11871582 - Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitry (2024-01-09),
5. 11825662 - Ferroelectric capacitor, a ferroelectric memory cell, an array of ferroelectric memory cells, and a method of forming a ferroelectric capacitor (2023-11-21),
6. 11417730 - Vertical transistors with channel region having vertically elongated crystal grains that individually are directly against both of the top and bottom source/drain regions (2022-08-16),
7. 11289487 - Doped titanium nitride materials for DRAM capacitors, and related semiconductor devices, systems, and methods (2022-03-29),
8. 11264395 - Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitry (2022-03-01),
9. 11101274 - Ferroelectric capacitor, a ferroelectric memory cell, an array of ferroelectric memory cells, and a method of forming a ferroelectric capacitor (2021-08-24),
10. 10923593 - Transistor and methods of forming transistors (2021-02-16),
11. 10553673 - Methods used in forming at least a portion of at least one conductive capacitor electrode of a capacitor that comprises a pair of conductive capacitor electrodes having a capacitor insulator there-between and methods of forming a capacitor (2020-02-04),
12. 10008381 - Constructions comprising rutile-type titanium oxide; and methods of forming and utilizing rutile-type titanium oxide (2018-06-26),
13. 9887083 - Methods of forming capacitors (2018-02-06),
14. 9466660 - Semiconductor structures including molybdenum nitride, molybdenum oxynitride or molybdenum-based alloy material, and method of making such structures (2016-10-11),
15. 9236427 - Multi-material structures and capacitor-containing semiconductor constructions (2016-01-12),

Title: Unveiling Vassil N Antonov - A Prolific Innovator in Boise, ID

Introduction: Vassil N Antonov, a distinguished inventor based in Boise, ID, has made significant contributions in the field of vertical transistors, integrated circuitry, and ferroelectric capacitors. With an impressive track record of 33 patents, Antonov has solidified his position as a pioneer in the realm of semiconductor technology.

Latest Patents: One of Antonov's recent patents involves a novel method of forming a vertical transistor, utilizing multiple time-spaced microwave annealing steps to enhance its performance. Additionally, his work on ferroelectric capacitors, memory cells, and memory cell arrays showcases his expertise in advancing memory storage technologies.

Career Highlights: Antonov has honed his skills and expertise while working at prestigious companies such as Micron Technology Incorporated and Nan Ya Technology Corporation. His experience in these renowned organizations has undoubtedly played a crucial role in shaping his innovative mindset and technical prowess.

Collaborations: Throughout his career, Antonov has collaborated with industry peers such as Vishwanath Bhat and Chris M Carlson. These fruitful partnerships have led to the development of groundbreaking technologies and patent-worthy inventions, solidifying Antonov's reputation as a collaborative and forward-thinking inventor.

Conclusion: Vassil N Antonov's exceptional work in the realm of semiconductor technology underscores his impact on the field of innovations. His relentless pursuit of excellence and penchant for pushing boundaries have cemented his legacy as a trailblazing inventor in Boise, ID, and beyond.

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