The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2020

Filed:

Dec. 27, 2017
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Manuj Nahar, Boise, ID (US);

Vassil N. Antonov, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/02 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); H01L 27/108 (2006.01); B82Y 99/00 (2011.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); H01L 21/02172 (2013.01); H01L 21/02337 (2013.01); H01L 21/02356 (2013.01); H01L 21/0234 (2013.01); H01L 28/75 (2013.01);
Abstract

A method used in forming at least a portion of at least one conductive capacitor electrode of a capacitor that comprises a pair of conductive capacitor electrodes having a capacitor insulator there-between comprises forming an insulative first material comprising an amorphous insulative metal oxide. The amorphous insulative metal oxide is reduced in a reducing-ambient to form a conductive second material from the insulative first material. Such reducing in the reducing-ambient both (a) removes oxygen from and changes the stoichiometry of the metal oxide, and (b) crystallizes the metal oxide into a crystalline state that is conductive.


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