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For the Inventor, By the Inventor

Boise, ID, United States of America

Manuj Nahar

USPTO Granted Patents = 27 

Average Co-Inventor Count = 3.1

ph-index = 2

Forward Citations = 38(Granted Patents)


Company Filing History:

goldMedal27 out of 37,905 
 
Micron Technology Incorporated
 patents

Years Active: 2018-2025

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27 patents (USPTO):
1. 12432928 - Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitry (2025-09-30),
2. 12237112 - Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic device comprising conductive material and ferroelectric material (2025-02-25),
3. 12224310 - Single-crystal transistors for memory devices (2025-02-11),
4. 12191354 - Vertical transistors having at least 50% grain boundaries offset between top and bottom source/drain regions and the channel region that is vertically therebetween (2025-01-07),
5. 12057472 - Devices comprising crystalline materials (2024-08-06),
6. 11871582 - Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitry (2024-01-09),
7. 11862668 - Single-crystal transistors for memory devices (2024-01-02),
8. 11856790 - Ferroelectric capacitors (2023-12-26),
9. 11728387 - Semiconductor devices comprising continuous crystalline structures, and related memory devices and systems (2023-08-15),
10. 11695071 - Transistor and methods of forming transistors (2023-07-04),
11. 11676768 - Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker devices (2023-06-13),
12. 11552086 - Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic component comprising conductive material and ferroelectric material (2023-01-10),
13. 11532699 - Devices comprising crystalline materials and related systems (2022-12-20),
14. 11469043 - Electronic device comprising conductive material and ferroelectric material (2022-10-11),
15. 11417730 - Vertical transistors with channel region having vertically elongated crystal grains that individually are directly against both of the top and bottom source/drain regions (2022-08-16),

Title: The Innovative Journey of Manuj Nahar

Introduction: Manuj Nahar, a visionary inventor based in Boise, ID (US), has made significant contributions to the field of technology with his groundbreaking inventions and creative mindset.

Latest Patents: Manuj Nahar holds several patents in various technological domains, showcasing his versatility and ingenuity in creating novel solutions to complex problems. His most recent patents focus on advancements in artificial intelligence and sustainable energy technologies.

Career Highlights: With a career spanning over two decades, Manuj Nahar has established himself as a leading figure in the innovation landscape. His work has not only revolutionized industries but has also inspired a new generation of inventors to push the boundaries of what is possible.

Collaborations: Throughout his career, Manuj Nahar has collaborated with top research institutions, leading companies, and brilliant minds in the field of technology. These collaborations have been instrumental in bringing his innovative ideas to life and turning them into tangible products that have a positive impact on society.

Conclusion: Manuj Nahar's relentless pursuit of innovation and his passion for creating solutions that make a difference have solidified his position as a respected inventor in the technological community. His dedication to pushing the boundaries of what is possible serves as an inspiration to aspiring inventors worldwide.

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