The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2025

Filed:

Jul. 08, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Manuj Nahar, Boise, ID (US);

Vassil N. Antonov, Boise, ID (US);

Kamal M. Karda, Boise, ID (US);

Michael Mutch, Meridian, ID (US);

Hung-Wei Liu, Meridian, ID (US);

Jeffery B. Hull, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 21/02595 (2013.01); H01L 21/02686 (2013.01); H01L 29/04 (2013.01); H01L 29/0684 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01);
Abstract

A transistor comprises a top source/drain region, a bottom source/drain region, a channel region vertically between the top and bottom source/drain regions, and a gate operatively laterally-adjacent the channel region. The channel region is crystalline and comprises a plurality of vertically-elongated crystal grains that individually are directly against both of the top source/drain region and the bottom source/drain region. Other embodiments, including methods, are disclosed.


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