IDiyas

For the Inventor, By the Inventor

Boise, ID, United States of America

Jeffery B Hull

USPTO Granted Patents = 17 

Average Co-Inventor Count = 4.5

ph-index = 2

Forward Citations = 14(Granted Patents)


Company Filing History:

goldMedal17 out of 37,905 
 
Micron Technology Incorporated
 patents

Years Active: 2014-2025

Loading Chart...
17 patents (USPTO):
1. 12432928 - Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitry (2025-09-30),
2. 12256553 - On-die formation of single-crystal semiconductor structures (2025-03-18),
3. 12191354 - Vertical transistors having at least 50% grain boundaries offset between top and bottom source/drain regions and the channel region that is vertically therebetween (2025-01-07),
4. 12113130 - Transistor and methods of forming integrated circuitry (2024-10-08),
5. 12057493 - Integrated circuitry, method used in the fabrication of a vertical transistor, and method used in the fabrication of integrated circuitry (2024-08-06),
6. 11871582 - Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitry (2024-01-09),
7. 11777011 - Integrated circuitry, method used in the fabrication of a vertical transistor, and method used in the fabrication of integrated circuitry (2023-10-03),
8. 11688808 - Transistor and methods of forming integrated circuitry (2023-06-27),
9. 11637175 - Vertical transistors (2023-04-25),
10. 11417730 - Vertical transistors with channel region having vertically elongated crystal grains that individually are directly against both of the top and bottom source/drain regions (2022-08-16),
11. 11387369 - Semiconductor structure formation (2022-07-12),
12. 11264395 - Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitry (2022-03-01),
13. 11024736 - Transistor and methods of forming integrated circuitry (2021-06-01),
14. 10749041 - Programmable charge storage transistor, an array of elevationally-extending strings of memory cells, methods of forming Si3Nx, methods of forming insulator material that is between a control gate and charge-storage material of a programmable charge-storage transistor, methods of forming an array of elevationally-extending strings of memory cells, a programmable charge-storage transistor manufactured in accordance with methods, and an array of elevationally-extending strings of memory cells man (2020-08-18),
15. 10483407 - Methods of forming sin, methods of forming insulator material between a control gate and charge-storage material of a programmable charge-storage transistor, and methods of forming an array of elevationally-extending strings of memory cells and a programmable charge-storage transistor manufactured in accordance with methods (2019-11-19),

Title: Innovator Spotlight: Jeffery B Hull

Introduction: Jeffery B Hull, based in Boise, ID, is a prominent inventor known for his contributions to the field of semiconductor technology. With a total of 16 patents, Hull has made significant advancements that have impacted the design and functionality of transistors in integrated circuits.

Latest Patents: Among Hull's latest patents are two noteworthy inventions. The first patent describes a novel design for vertical transistors, featuring at least 50% grain boundaries offset between the top and bottom source/drain regions and the channel region. This design highlights a crystallized channel region consisting of vertically-elongated crystal grains, which enhances the efficiency and performance of the transistor. The second patent focuses on methods for forming integrated circuitry that also incorporate a vertically arranged transistor structure. In this invention, it is emphasized that at least one of the regions, whether top or bottom source/drain, is crystalline, and the average crystal sizes within the respective regions are maintained within 0.064 μm of each other, further improving the overall performance.

Career Highlights: Jeffery B Hull's career is marked by his significant role at Micron Technology Incorporated, a leading company in the semiconductor industry. His expertise and innovative spirit have led to multiple patented technologies that push the boundaries of current electronic designs. Hull's work primarily revolves around enhancing the efficiency of transistors, which are crucial for modern electronic devices.

Collaborations: Throughout his career, Hull has collaborated with esteemed colleagues, including Hung-Wei Liu and Anish A Khandekar. These partnerships have fostered a creative environment that encourages the exchange of ideas and leads to groundbreaking innovations in semiconductor technology.

Conclusion: Jeffery B Hull's contributions to the field of semiconductor technology are invaluable. His innovative designs and collaborative spirit have not only advanced the technology but also set a standard for future developments in the industry. As technology continues to evolve, Hull's work at Micron Technology Incorporated will undoubtedly shape the future of integrated circuits and electronic devices.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…