The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2023
Filed:
Dec. 09, 2020
Micron Technology, Inc., Boise, ID (US);
Yi Fang Lee, Boise, ID (US);
Hung-Wei Liu, Meridian, ID (US);
Ning Lu, Boise, ID (US);
Anish A. Khandekar, Boise, ID (US);
Jeffery B. Hull, Boise, ID (US);
Silvia Borsari, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A vertical transistor comprises a top source/drain region, a bottom source/drain region, a channel region vertically between the top and bottom source/drain regions, and a gate operatively laterally-adjacent the channel region. The top source/drain region and the channel region have a top interface and the bottom source/drain region and the channel region have a bottom interface. The channel region is crystalline and has an average crystal grain size of its crystal grains that is less than 20 nanometers. The channel region at the top interface or at the bottom interface has greater horizontal texture than volume of the crystal grains in the channel region that is vertically between the crystal grains that are at the top and bottom interfaces. Other embodiments and aspects are disclosed.