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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11101274 B1

PDFFull Text
Date of Patent:
Aug. 24, 2021

Filed:

Dec. 05, 2019

Ferroelectric capacitor, a ferroelectric memory cell, an array of ferroelectric memory cells, and a method of forming a ferroelectric capacitor

Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Clement Jacob, Boise, ID (US);

Vassil N. Antonov, Boise, ID (US);

Jaydeb Goswami, Boise, ID (US);

Albert Liao, Boise, ID (US);

Christopher W. Petz, Boise, ID (US);

Durai Vishak Nirmal Ramaswamy, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:

Wells St. John P.S.

Primary Examiner:

Richard A Booth

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/11507 (2017.01); H01L 21/02 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11507 (2013.01); H01L 21/02175 (2013.01); H01L 21/02244 (2013.01); H01L 28/60 (2013.01);
Abstract

A ferroelectric capacitor comprises two conductive capacitor electrodes having ferroelectric material there-between. At least one of the capacitor electrodes comprise MSiO, where 'M' is at least one of Ru, Ti, Ta, Co, Pt, Ir. Os, Mo, V, W, Sr, Re, Rh, Pd, La, Zn, In, Sn, and Nb. Other aspects, including method, are disclosed.

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Jacob, Clement. (2021). Ferroelectric capacitor, a ferroelectric memory cell, an array of ferroelectric memory cells, and a method of forming a ferroelectric capacitor (U.S. Patent No. 11101274). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11101274

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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