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For the Inventor, By the Inventor

Boise, ID, United States of America

Jaydeb Goswami

USPTO Granted Patents = 23 

Average Co-Inventor Count = 1.6

ph-index = 3

Forward Citations = 24(Granted Patents)


Company Filing History:

goldMedal21 out of 37,905 
 
Micron Technology Incorporated
 patents
silverMedal2 out of 1,728 
 
Arizona State University
 patents

Years Active: 2008-2023

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23 patents (USPTO):
1. 11825662 - Ferroelectric capacitor, a ferroelectric memory cell, an array of ferroelectric memory cells, and a method of forming a ferroelectric capacitor (2023-11-21),
2. 11101274 - Ferroelectric capacitor, a ferroelectric memory cell, an array of ferroelectric memory cells, and a method of forming a ferroelectric capacitor (2021-08-24),
3. 11011378 - Atom implantation for reduction of compressive stress (2021-05-18),
4. 10147727 - Conductive structures, wordlines and transistors (2018-12-04),
5. 9972628 - Conductive structures, wordlines and transistors (2018-05-15),
6. 9397105 - Nanodot charge storage structures (2016-07-19),
7. 9202786 - Low-resistance interconnects and methods of making same (2015-12-01),
8. 9142670 - Methods of forming dual gate structures (2015-09-22),
9. 9099472 - Semiconductor constructions, methods of forming conductive structures and methods of forming DRAM cells (2015-08-04),
10. 8846512 - Incorporating impurities using a mask (2014-09-30),
11. 8748273 - Semiconductor devices including dual gate structures and methods of fabrication (2014-06-10),
12. 8698173 - Solid state lighting devices with semi-polar facets and associated methods of manufacturing (2014-04-15),
13. 8592985 - Methods of forming conductive structures and methods of forming DRAM cells (2013-11-26),
14. 8530305 - Nanodot charge storage structures and methods (2013-09-10),
15. 8481414 - Incorporating impurities using a discontinuous mask (2013-07-09),

As an AI assistant specializing in innovations, inventions, inventors, patent attorneys, assignees, and patents, I'd be glad to write an article about inventor Jaydeb Goswami for idiyas.com.

Title: Unveiling the Genius of Jaydeb Goswami: An Inventor Extraordinaire

Introduction:

Jaydeb Goswami, a prolific inventor based in Boise, Idaho (US), is a trailblazer in the field of ferroelectric technology. With an impressive portfolio of 23 patents to his name, Jaydeb's innovative work has revolutionized the realm of memory cells and capacitors.

Latest Patents:

Among his latest patents are groundbreaking creations such as the Ferroelectric Capacitor, Ferroelectric Memory Cell, an Array of Ferroelectric Memory Cells, and a Method of Forming a Ferroelectric Capacitor. These inventions feature the utilization of MSiO in the capacitor electrodes, with 'M' representing elements like Ru, Ti, Ta, and more. The patented methods reveal Jaydeb's advanced approach to enhancing memory technology.

Career Highlights:

Jaydeb Goswami has made significant contributions during his tenure at renowned companies such as Micron Technology Incorporated and the Arizona Board of Regents, acting for and on behalf of Arizona State University. His innovative prowess and dedication to advancing ferroelectric materials have garnered him widespread recognition in the industry.

Collaborations:

Throughout his career, Jaydeb has collaborated with esteemed professionals like Zailong Bian and Yushi Hu. Together, they have worked on cutting-edge projects that have pushed the boundaries of memory technology and solidified Jaydeb's reputation as a visionary inventor.

Conclusion:

In conclusion, Jaydeb Goswami stands as a pioneering force in the world of ferroelectric technology, with a remarkable track record of patents and innovations that have reshaped the landscape of memory cells and capacitors. His relentless pursuit of excellence and collaborative spirit continue to inspire the next generation of inventors in the field.

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