The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2021

Filed:

Jul. 01, 2019
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Yiping Wang, Boise, ID (US);

Caizhi Xu, Boise, ID (US);

Pengyuan Zheng, Boise, ID (US);

Ying Rui, Meridian, ID (US);

Russell A. Benson, Boise, ID (US);

Yongjun J. Hu, Boise, ID (US);

Jaydeb Goswami, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 27/108 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01L 21/3086 (2013.01); H01L 27/10808 (2013.01);
Abstract

Systems, apparatuses, and methods related to atom implantation for reduction of compressive stress are described. An example method may include patterning a working surface of a semiconductor, the working surface having a hard mask material formed over a dielectric material and forming a material having a lower refractive index (RI), relative to a RI of the hard mask material, over the hard mask material. The method may further include implanting atoms through the lower RI material and into the hard mask material to reduce the compressive stress in the hard mask material.


Find Patent Forward Citations

Loading…