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For the Inventor, By the Inventor

Boise, ID, United States of America

Yiping Wang

This inventor holds 21 USPTO granted patents and 17 published patent applications, primarily in Microelectronic Devices. Top assignee: Micron Technology Incorporated. Active years: 2021-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yiping Wang. Retrieved from https://idiyas.com/inventor/yiping-wang-grq3u5x9

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 21 

% Patents Active = 90.5

Average Co-Inventor Count = 3.9

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:

goldMedal21 out of 39,253 
 
Micron Technology Incorporated
 patents

Years Active: 2021-2026

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Areas of Expertise:
Microelectronic Devices
Memory Arrays
Integrated Assemblies
Memory Circuitry
Conductive Levels
Staircase Structures
Support Contact Structures
Plasma-Doped Trenches
Conductive Vias
Laminate Spacer Structures
Atom Implantation
Electronic Systems
21 patents (USPTO):Explore Patents
1. 12757703 - Staircase structures for accessing three-dimensional memory arrays (2026-10-06),
2. 12653018 - Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems (2026-06-09),
3. 12482752 - Memory circuitry and method used in forming memory circuitry (2025-11-25),
4. 12451442 - Methods of forming microelectronic devices including support contact structures, and related microelectronic devices, memory devices, and electronic systems (2025-10-21),
5. 12406932 - Memory circuitry and method used in forming memory circuitry (2025-09-02),
6. 12354912 - Plasma-doped trenches for memory (2025-07-08),
7. 12342540 - Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells (2025-06-24),
8. 12300616 - Memory device including staircase structure having conductive pads (2025-05-13),
9. 12256546 - Integrated assemblies and methods of forming integrated assemblies (2025-03-18),
10. 12170250 - Microelectronic devices and memory devices including conductive levels having varying compositions (2024-12-17),
11. 11972978 - Conductive via of integrated circuitry, memory array comprising strings of memory cells, method of forming a conductive via of integrated circuitry, and method of forming a memory array comprising strings of memory cells (2024-04-30),
12. 11844220 - Integrated assemblies and methods of forming integrated assemblies (2023-12-12),
13. 11729964 - Methods of forming an apparatus including laminate spacer structures (2023-08-15),
14. 11721629 - Memory device including staircase structure having conductive pads (2023-08-08),
15. 11700729 - Memory arrays and methods used in forming a memory array comprising strings of memory cells (2023-07-11),

Title: The Innovative Journey of Yiping Wang

Introduction

Yiping Wang is a prominent inventor based in Boise, ID, whose impressive portfolio includes 16 patents. His contributions to the field of memory device technology are noteworthy, showcasing his innovative spirit and commitment to advancing electronic systems.

Latest Patents

Among his latest patents, Yiping Wang is recognized for his work on "Plasma-doped trenches for memory." This patent describes a method for forming a memory device that incorporates plasma-doped trenches. The process involves creating a stack of alternating layers of polysilicon and oxide materials, followed by etching a trench in the stack and doping it using a plasma doping process. Various gases such as Boron fluoride, diborane, methane, or Boron and Carbon Hydride diluted with Hydrogen or Helium are utilized in this procedure, allowing for the doping of the polysilicon material. Additionally, his patent addresses memory arrays consisting of strings of memory cells, comprising laterally-spaced memory blocks with vertical stacks of insulative and conductive tiers, highlighting his significant advancements in memory technology.

Career Highlights

Yiping Wang has established a noteworthy career at Micron Technology Incorporated, a leader in memory and storage solutions. His extensive work has contributed not only to the patent landscape but also to the technological advancements within the company.

Collaborations

Throughout his career, Yiping has collaborated with esteemed colleagues, including Yongjun Jeff Hu and Jordan D Greenlee. These collaborations have fostered an innovative environment, resulting in significant advancements in memory technology.

Conclusion

Yiping Wang’s contributions to the field of memory devices exemplify the spirit of innovation. With a robust patent portfolio and a commitment to advancing technology at Micron Technology Incorporated, his work continues to shape the future of memory solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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