The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2025

Filed:

Jun. 01, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Yiping Wang, Boise, ID (US);

Sandra L. Tagg, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/535 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 23/535 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02);
Abstract

Methods of forming a microelectronic device includes forming a preliminary stack structure including blocks separated by slots, each block including: tiers each including insulative material and sacrificial material; and live contact openings and support contact openings extending completely through the tiers. A first liner and a second liner are formed over surfaces of the preliminary stack structure. Portions of the second liner and the first liner within the support contact openings are removed without removing additional portions of the second liner and the first liner within the slots and the live contact openings. Fill material is formed within the slots, the live contact openings, and the support contact openings to form sacrificial slot structures, sacrificial contact structures, and support contact structures. The sacrificial contact structures are replaced with conductive contact structures. The sacrificial slot structures are removed, and the sacrificial material of the tiers is replaced with conductive material.


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