The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2023
Filed:
Jul. 16, 2021
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Clement Jacob, Boise, ID (US);
Vassil N. Antonov, Boise, ID (US);
Jaydeb Goswami, Boise, ID (US);
Albert Liao, Boise, ID (US);
Christopher W. Petz, Boise, ID (US);
Durai Vishak Nirmal Ramaswamy, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H10B 53/30 (2023.01); H01L 21/02 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H10B 53/30 (2023.02); H01L 21/02175 (2013.01); H01L 21/02244 (2013.01); H01L 28/60 (2013.01);
Abstract
A ferroelectric capacitor comprises two conductive capacitor electrodes having ferroelectric material there-between. At least one of the capacitor electrodes comprise MSiO, where 'M' is at least one of Ru, Ti, Ta, Co, Pt, Ir, Os, Mo, V, W, Sr, Re, Rh, Pd, La, Zn, In, Sig, and Nb, Other aspects, including method, are disclosed.