The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2022
Filed:
Feb. 23, 2018
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Matthew N. Rocklein, Boise, ID (US);
Paul A. Paduano, Nampa, ID (US);
Sanket S. Kelkar, Boise, ID (US);
Christopher W. Petz, Boise, ID (US);
Zhe Song, Boise, ID (US);
Vassil Antonov, Boise, ID (US);
Qian Tao, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 21/285 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10808 (2013.01); H01L 21/28556 (2013.01); H01L 27/10852 (2013.01); H01L 28/90 (2013.01);
Abstract
A DRAM capacitor comprising a first capacitor electrode configured as a container and comprising a doped titanium nitride material, a capacitor dielectric on the first capacitor electrode, and a second capacitor electrode on the capacitor dielectric. Methods of forming the DRAM capacitor are also disclosed, as are semiconductor devices and systems comprising such DRAM capacitors.