The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2016
Filed:
Oct. 16, 2013
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Matthew N. Rocklein, Boise, ID (US);
Kotha Sai Madhukar Reddy, Boise, ID (US);
Vassil Antonov, Boise, ID (US);
Vishwanath Bhat, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); H01L 28/40 (2013.01);
Abstract
A semiconductor structure may include a first electrode over a substrate, a high-K dielectric material over the first electrode, and a second electrode over the high-K dielectric material, wherein at least one of the first electrode and the second electrode may include a material selected from the group consisting of a molybdenum nitride (MoN) material, a molybdenum oxynitride (MoON) material, a molybdenum oxide (MoO) material, and a molybdenum-based alloy material comprising molybdenum and nitrogen.