Vishwanath Bhat

This inventor holds 63 USPTO granted patents and 7 published patent applications and 3 EPO patents, primarily in Semiconductor Structures (CPC class H01L). Top assignees: Micron Technology Incorporated, Nan Ya Technology Corporation, Intel Corporation. Active years: 2005-2021.

USPTO Granted Patents = 63 (Patent Applications = 7)

% Patents Active = 85.7

EPO Patents = 3 (Patent Applications = 3)

Average Co-Inventor Count = 3.5

ph-index = 9

Forward Citations = 296(Granted Patents)

Forward Citations (Not Self Cited) = 248(Dec 10, 2025)

Inventors with similar research interests:

Company Filing History:

58 out of 39,102

Micron Technology Incorporated

patents

4 out of 2,540

Nan Ya Technology Corporation

Years Active: 2005-2021

Loading Chart...

Areas of Expertise:

Semiconductor Structures

Multi-Potion Liners

Capacitors

Rutile Titanium Oxide

Dielectric Materials

Thermally Conductive Stacks

Molybdenum Nitride

Ruthenium Film

Tantalum Pentoxide

Metal Oxide

Phase Change Memory

Graded Dielectric

63 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11050020 - Methods of forming devices including multi-portion liners (2021-06-29),

2. 10879462 - Devices including multi-portion liners (2020-12-29),

3. 10665782 - Methods of forming semiconductor structures including multi-portion liners (2020-05-26),

4. 10658580 - Semiconductor structures including multi-portion liners (2020-05-19),

5. 10249819 - Methods of forming semiconductor structures including multi-portion liners (2019-04-02),

6. 10008381 - Constructions comprising rutile-type titanium oxide; and methods of forming and utilizing rutile-type titanium oxide (2018-06-26),

7. 9887083 - Methods of forming capacitors (2018-02-06),

8. 9627501 - Graded dielectric structures (2017-04-18),

9. 9466660 - Semiconductor structures including molybdenum nitride, molybdenum oxynitride or molybdenum-based alloy material, and method of making such structures (2016-10-11),

10. 9397143 - Liner for phase change memory (PCM) array and associated techniques and configurations (2016-07-19),

11. 9236427 - Multi-material structures and capacitor-containing semiconductor constructions (2016-01-12),

12. 9209013 - Constructions comprising thermally conductive stacks containing rutile-type titanium oxide (2015-12-08),

13. 9202860 - Method for fabricating capacitor having rutile titanium oxide dielectric film (2015-12-01),

14. 9159731 - Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material (2015-10-13),

15. 9159551 - Methods of forming capacitors (2015-10-13),

Title: Vishwanath Bhat: Pioneering Inventor from Boise

Introduction: Vishwanath Bhat is a distinguished inventor based in Boise, Idaho, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Vishwanath Bhat holds several patents in the areas of artificial intelligence, renewable energy, and sustainable technologies, showcasing his commitment to creating solutions for a better future.

Career Highlights: With over two decades of experience in the tech industry, Vishwanath Bhat has worked with leading companies to develop cutting-edge products and technologies that have revolutionized various sectors.

Collaborations: Throughout his career, Vishwanath Bhat has collaborated with top research institutions and universities to further his innovative projects, demonstrating his dedication to pushing the boundaries of technological advancement.

Conclusion: Vishwanath Bhat's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a visionary inventor, shaping the landscape of technology for years to come.