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Boise, ID, United States of America

Vishwanath Bhat

USPTO Granted Patents = 63 (Patent Applications = 7)

EPO Patents = 3 (Patent Applications = 3)

Average Co-Inventor Count = 3.5

ph-index = 9

Forward Citations = 293(Granted Patents)

Forward Citations (Not Self Cited) = 248(Dec 10, 2025)

Inventors with similar research interests:

Company Filing History:

58 out of 37,972

Micron Technology Incorporated

Nan Ya Technology Corporation

1 out of 54,750

Intel Corporation

Years Active: 2005-2021

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Areas of Expertise:

Multi-Potion Liners

Semiconductor Structures

Rutile Titanium Oxide

Capacitor Fabrication

Dielectric Materials

Thermally Conductive Stacks

Ruthenium Films

Graded Dielectric Structures

Tantalum Pentoxide

Phase Change Memory

Metal Oxide Materials

Insulative Elements

63 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11050020 - Methods of forming devices including multi-portion liners (2021-06-29),

2. 10879462 - Devices including multi-portion liners (2020-12-29),

3. 10665782 - Methods of forming semiconductor structures including multi-portion liners (2020-05-26),

4. 10658580 - Semiconductor structures including multi-portion liners (2020-05-19),

5. 10249819 - Methods of forming semiconductor structures including multi-portion liners (2019-04-02),

6. 10008381 - Constructions comprising rutile-type titanium oxide; and methods of forming and utilizing rutile-type titanium oxide (2018-06-26),

7. 9887083 - Methods of forming capacitors (2018-02-06),

8. 9627501 - Graded dielectric structures (2017-04-18),

9. 9466660 - Semiconductor structures including molybdenum nitride, molybdenum oxynitride or molybdenum-based alloy material, and method of making such structures (2016-10-11),

10. 9397143 - Liner for phase change memory (PCM) array and associated techniques and configurations (2016-07-19),

11. 9236427 - Multi-material structures and capacitor-containing semiconductor constructions (2016-01-12),

12. 9209013 - Constructions comprising thermally conductive stacks containing rutile-type titanium oxide (2015-12-08),

13. 9202860 - Method for fabricating capacitor having rutile titanium oxide dielectric film (2015-12-01),

14. 9159731 - Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material (2015-10-13),

15. 9159551 - Methods of forming capacitors (2015-10-13),

Title: Vishwanath Bhat: Pioneering Inventor from Boise

Introduction: Vishwanath Bhat is a distinguished inventor based in Boise, Idaho, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Vishwanath Bhat holds several patents in the areas of artificial intelligence, renewable energy, and sustainable technologies, showcasing his commitment to creating solutions for a better future.

Career Highlights: With over two decades of experience in the tech industry, Vishwanath Bhat has worked with leading companies to develop cutting-edge products and technologies that have revolutionized various sectors.

Collaborations: Throughout his career, Vishwanath Bhat has collaborated with top research institutions and universities to further his innovative projects, demonstrating his dedication to pushing the boundaries of technological advancement.

Conclusion: Vishwanath Bhat's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a visionary inventor, shaping the landscape of technology for years to come.

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