The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2015
Filed:
Jan. 06, 2014
Applicant:
Nanya Technology Corp., Tao-Yuan Hsien, TW;
Inventors:
Chun-I Hsieh, Taoyuan County, TW;
Vishwanath Bhat, Boise, ID (US);
Assignee:
NANYA TECHNOLOGY CORP., Gueishan Dist., Taoyuan, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 21/02 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); C23C 16/405 (2013.01); C23C 16/45527 (2013.01); H01L 21/0228 (2013.01); H01L 21/02186 (2013.01); H01L 28/40 (2013.01);
Abstract
A method for fabricating a capacitor includes: (1) forming a bottom electrode on a substrate; (2) forming a template layer on the bottom electrode; (3) performing a plurality of atomic layer deposition (ALD) cycles by using water vapor as an oxidant thereby depositing a first TiO2 layer on the template layer; and (4) performing ozone pulse and purge step to transform entire thickness of the first TiO2 layer into rutile phase.