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For the Inventor, By the Inventor

Boise, ID, United States of America

Ashonita A Chavan

LinkedIn
USPTO Granted Patents = 44 

 

Average Co-Inventor Count = 3.6

ph-index = 7

Forward Citations = 188(Granted Patents)


Company Filing History:

goldMedal44 out of 37,905 
 
Micron Technology Incorporated
 patents

Years Active: 2015-2025

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44 patents (USPTO):
1. 12432928 - Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitry (2025-09-30),
2. 12302585 - Memory device assembly with a leaker device (2025-05-13),
3. 12237112 - Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic device comprising conductive material and ferroelectric material (2025-02-25),
4. 12150312 - Array of capacitors, array of memory cells, methods of forming an array of capacitors, and methods of forming an array of memory cells (2024-11-19),
5. 11935574 - Memory cells and methods of forming a capacitor including current leakage paths having different total resistances (2024-03-19),
6. 11871582 - Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitry (2024-01-09),
7. 11856790 - Ferroelectric capacitors (2023-12-26),
8. 11735416 - Electronic devices comprising crystalline materials and related memory devices and systems (2023-08-22),
9. 11711924 - Methods of forming structures containing leaker-devices and memory configurations incorporating leaker-devices (2023-07-25),
10. 11706929 - Memory cells (2023-07-18),
11. 11676768 - Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker devices (2023-06-13),
12. 11587938 - Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker devices (2023-02-21),
13. 11552086 - Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic component comprising conductive material and ferroelectric material (2023-01-10),
14. 11469043 - Electronic device comprising conductive material and ferroelectric material (2022-10-11),
15. 11404217 - Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker devices (2022-08-02),

Title: Pioneering Innovator: Ashonita A Chavan

Introduction:

Ashonita A Chavan, an esteemed inventor based in Boise, ID, is a trailblazer in the field of technology. With an impressive portfolio of 40 patents to his name, Chavan's inventive spirit and unwavering dedication to pushing the boundaries of innovation have solidified his position as a standout inventor in the industry.

Latest Patents:

Among his latest patents is a groundbreaking invention titled "Memory cells and methods of forming a capacitor including current leakage paths having different total resistances". This patent details a memory cell design that incorporates unique current leakage paths, paving the way for enhanced performance and efficiency in capacitor technology. Additionally, Chavan's patent on "Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitry" showcases his expertise in developing cutting-edge solutions for integrated circuitry.

Career Highlights:

Ashonita A Chavan is associated with Micron Technology Incorporated, a leading technology company at the forefront of innovation. His contributions to Micron's research and development efforts have been instrumental in driving progress and shaping the future of technology. Chavan's innovative ideas and inventive prowess have significantly impacted the company's success in the competitive tech landscape.

Collaborations:

Throughout his career, Chavan has collaborated with industry peers and experts to exchange knowledge, foster creativity, and bring innovative concepts to life. Notable coworkers such as Durai Vishak Nirmal Ramaswamy and Manuj Nahar have enriched Chavan's professional journey, leading to successful partnerships and groundbreaking inventions.

Conclusion:

In conclusion, Ashonita A Chavan's remarkable achievements, relentless pursuit of innovation, and collaborative spirit exemplify the essence of a true visionary in the world of technology. His passion for pushing boundaries, coupled with his impressive track record of patents and contributions to Micron Technology Incorporated, continues to inspire and drive progress in the ever-evolving landscape of innovation.

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