The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2026

Filed:

Aug. 08, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Ashonita A. Chavan, Boise, ID (US);

Aysha Siddique Shanta, Boise, ID (US);

Aditi P. Kulkarni, Broomfield, CO (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 53/30 (2023.01); G11C 11/22 (2006.01); H10B 12/00 (2023.01); H10D 1/68 (2025.01);
U.S. Cl.
CPC ...
H10B 53/30 (2023.02); G11C 11/221 (2013.01); H10B 12/03 (2023.02); H10D 1/711 (2025.01); H10D 1/716 (2025.01);
Abstract

Implementations described herein relate to various structures, integrated assemblies, and memory devices. In some implementations, an integrated assembly includes a cell plate, a pillar that includes a bottom electrode and a leaker device on top of the bottom electrode, and a top electrode. The top electrode includes a first top electrode portion and a second top electrode portion. The first top electrode portion is separated from the bottom electrode by the leaker device. The second top electrode portion is separated from the bottom electrode and the leaker device by an insulator. The leaker device is configured to discharge excess charge from the bottom electrode to the cell plate via the first top electrode portion.


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