The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2023

Filed:

Sep. 21, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Ashonita A. Chavan, Boise, ID (US);

Durai Vishak Nirmal Ramaswamy, Boise, ID (US);

Michael Mutch, Meridian, ID (US);

Sameer Chhajed, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02592 (2013.01); H01L 21/02532 (2013.01); H01L 21/02667 (2013.01); H01L 21/762 (2013.01); H01L 27/1222 (2013.01); H01L 27/1285 (2013.01); H01L 29/78642 (2013.01);
Abstract

A method includes forming a first amorphous material, forming a second amorphous material over and in contact with the first material, removing a portion of the second material and the first material to form pillars, and exposing the materials to a temperature between a crystallization temperature of the first material and a crystallization temperature of the second material. The first material and the second material each comprise at least one element selected from the group consisting of silicon and germanium. The second material exhibits a crystallization temperature different than a crystallization temperature of the first material. Semiconductor structures, memory devices, and systems are also disclosed.


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