The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2025

Filed:

Jun. 06, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Fatma Arzum Simsek-Ege, Boise, ID (US);

Ashonita A. Chavan, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 53/30 (2023.01); H10B 51/10 (2023.01); H10B 51/30 (2023.01); H10B 53/10 (2023.01);
U.S. Cl.
CPC ...
H10B 53/30 (2023.02); H10B 51/30 (2023.02); H10B 51/10 (2023.02); H10B 53/10 (2023.02);
Abstract

Implementations described herein relate to various structures, integrated assemblies, and memory devices. In some implementations, a memory device includes multiple memory cells. Each memory cell may include a bottom electrode having an open top cylinder shape that contains a support pillar, may include a top electrode, may include an insulator that separates the top electrode from the bottom electrode, and may include a leaker device having an open top cylinder shape. A bottom surface of the leaker device may abut at least one of a top surface of the bottom electrode or a top surface of the support pillar. A top surface of the leaker device may abut a bottom surface of a conductive plate. The memory device may also include the conductive plate.


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