The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2023

Filed:

Aug. 16, 2019
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Nicholas R. Tapias, Boise, ID (US);

Andrew Li, Boise, ID (US);

Adam W. Saxler, Boise, ID (US);

Kunal Shrotri, Boise, ID (US);

Erik R. Byers, Boise, ID (US);

Matthew J. King, Boise, ID (US);

Diem Thy N. Tran, Garden City, ID (US);

Wei Yeeng Ng, Boise, ID (US);

Anish A. Khandekar, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H10B 41/27 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02532 (2013.01); H01L 21/02631 (2013.01); H01L 21/02636 (2013.01); H01L 21/28568 (2013.01); H10B 41/27 (2023.02);
Abstract

Some embodiments include a structure having an opening extending into an integrated configuration. A first material is within the opening, and is configured to create an undulating topography relative to a sidewall of the opening. The undulating topography has a surface roughness characterized by a mean roughness parameter Rwhich is the mean peak-to-valley distance along the undulating topography. The Ris at least about 4 nm. A second material is within the opening and along at least a portion of the undulating topography. The first and second materials are compositionally different from one another. Some embodiments include integrated assemblies. Some embodiments include methods of forming integrated assemblies.


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