The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2025
Filed:
May. 15, 2019
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Somik Mukherjee, Boise, ID (US);
Shen Hu, Boise, ID (US);
Anish A. Khandekar, Boise, ID (US);
Sau Ha Cheung, Boise, ID (US);
Zhiqiang Xie, Meridian, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H10B 12/053 (2023.02); H01L 21/02233 (2013.01); H01L 21/76202 (2013.01); H10B 12/34 (2023.02);
Abstract
Methods, apparatuses, and systems related to forming a semiconductor using hybrid oxidation are described. An example method includes forming an opening to create an isolation region in a semiconductor substrate. The example method further includes depositing a first dielectric into the isolation region at a first oxidation rate. The example method further includes depositing a second dielectric into the isolation region at a second oxidation rate.