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For the Inventor, By the Inventor

Milpitas, CA, United States of America

Zhenyu Lu

This inventor holds 21 USPTO granted patents and 7 EPO patents, primarily in Three-Dimensional Memory Devices. Top assignee: Sandisk Technologies Inc.. Active years: 2016-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zhenyu Lu. Retrieved from https://idiyas.com/inventor/zhenyu-lu-4lc9hgzh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 21

% Patents Active = 95.2

 

Average Co-Inventor Count = 6.9

ph-index = 16

Forward Citations = 1,167(Granted Patents)


Location History:

  • Fremont, CA (US) (2017)
  • Milpitas, CA (US) (2016 - 2019)

Company Filing History:

goldMedal21 out of 4,962 
 
Sandisk Technologies Inc.
 patents

Years Active: 2016-2019

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Areas of Expertise:
Memory Device
Three-Dimensional
Multilevel Structure
Fabrication Method
Silicon Nitride
NAND Technology
Cobalt Silicide
Charge Storage
Isolation Dielectric
Vertical NAND
Stack Structure
Epitaxial Semiconductor
21 patents (USPTO):Explore Patents
1. 10269620 - Multi-tier memory device with through-stack peripheral contact via structures and method of making thereof (2019-04-23),
2. 10256248 - Through-memory-level via structures between staircase regions in a three-dimensional memory device and method of making thereof (2019-04-09),
3. 10249640 - Within-array through-memory-level via structures and method of making thereof (2019-04-02),
4. 10115732 - Three dimensional memory device containing discrete silicon nitride charge storage regions (2018-10-30),
5. 9985046 - Method of forming a staircase in a semiconductor device using a linear alignment control feature (2018-05-29),
6. 9935050 - Multi-tier three-dimensional memory devices including vertically shared source lines and method of making thereof (2018-04-03),
7. 9859363 - Self-aligned isolation dielectric structures for a three-dimensional memory device (2018-01-02),
8. 9853043 - Method of making a multilevel memory stack structure using a cavity containing a sacrificial fill material (2017-12-26),
9. 9842907 - Memory device containing cobalt silicide control gate electrodes and method of making thereof (2017-12-12),
10. 9780034 - Three-dimensional memory device containing annular etch-stop spacer and method of making thereof (2017-10-03),
11. 9779948 - Method of fabricating 3D NAND (2017-10-03),
12. 9728551 - Multi-tier replacement memory stack structure integration scheme (2017-08-08),
13. 9716101 - Forming 3D memory cells after word line replacement (2017-07-25),
14. 9679906 - Three-dimensional memory devices containing memory block bridges (2017-06-13),
15. 9673213 - Three dimensional memory device with peripheral devices under dummy dielectric layer stack and method of making thereof (2017-06-06),

Title: Innovations and Contributions of Zhenyu Lu

Introduction: Zhenyu Lu is an accomplished inventor based in Milpitas, California, with an impressive portfolio of 21 patents. His work primarily focuses on advancements in memory device technology, showcasing his ability to innovate in a rapidly evolving field.

Latest Patents: Among his latest inventions are two significant patents that contribute to the development of multi-tier memory devices. The first patent, titled "Multi-tier memory device with through-stack peripheral contact via structures and method of making thereof," presents a method of forming contacts to peripheral devices that extend through multiple tier structures, emphasizing reduced processing steps. It details the concurrent formation of peripheral via cavities and memory openings using sacrificial fill structures to streamline the manufacturing process.

Another noteworthy patent is "Through-memory-level via structures between staircase regions in a three-dimensional memory device and method of making thereof." This innovation outlines a method for creating electrically conductive paths through a memory-level assembly, enhancing the functionality and efficiency of memory devices.

Career Highlights: Zhenyu Lu is currently affiliated with SanDisk Technologies Inc., where he leverages his expertise to drive innovation in memory technology. His contributions to the field have positioned him as a key player in advancing the capabilities of modern memory devices.

Collaborations: Throughout his career, Zhenyu has collaborated with notable coworkers including Johann Alsmeier and Daxin Mao. Working alongside talented individuals enhances the innovative environment, fostering the development of cutting-edge solutions in technology.

Conclusion: Zhenyu Lu's contributions to the field of memory devices through his patents and collaborations underscore his dedication to innovation. His work at SanDisk Technologies Inc. continues to influence the evolution of memory technology, making a lasting impact on the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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