The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2019
Filed:
Jun. 08, 2016
Sandisk Technologies Llc, Plano, TX (US);
Jixin Yu, Milpitas, CA (US);
Zhenyu Lu, Milpitas, CA (US);
Alexander Chu, Milpitas, CA (US);
Kensuke Yamaguchi, Yokkaichi, JP;
Hiroyuki Ogawa, Yokkaichi, JP;
Daxin Mao, Cupertino, CA (US);
Yan LI, Milpitas, CA (US);
Johann Alsmeier, San Jose, CA (US);
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Abstract
A semiconductor structure includes a memory-level assembly located over a substrate and including at least one alternating stack and memory stack structures vertically extending through the at least one alternating stack. Each of the at least one an alternating stack includes alternating layers of respective insulating layers and respective electrically conductive layers, and each of the electrically conductive layers in the at least one alternating stack includes a respective opening such that a periphery of a respective spacer dielectric portion located in the opening contacts a sidewall of the respective electrically conductive layers. At least one through-memory-level via structure vertically extends through each of the spacer dielectric portions and the insulating layers.