The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2017
Filed:
Feb. 04, 2016
Sandisk Technologies Inc., Plano, TX (US);
Ching-Huang Lu, San Jose, CA (US);
Zhenyu Lu, Milpitas, CA (US);
Jixin Yu, Milpitas, CA (US);
Daxin Mao, Cupertino, CA (US);
Johann Alsmeier, San Jose, CA (US);
Wenguang Stephen Shi, Milpitas, CA (US);
Henry Chien, San Jose, CA (US);
SANDISK TECHNOLOGIES LLC, Plano, TX (US);
Abstract
A memory opening can be formed through a multiple tier structure. Each tier structure includes an alternating stack of sacrificial material layers and insulating layers. After formation of a dielectric oxide layer, the memory opening is filled with a sacrificial memory opening fill structure. The sacrificial material layers are removed selective to the insulating layers and the dielectric oxide layer to form backside recesses. Physically exposed portions of the dielectric oxide layer are removed. A backside blocking dielectric and electrically conductive layers are formed in the backside recesses. Subsequently, the sacrificial memory opening fill structure is replaced with a memory stack structure including a plurality of charge storage regions and a semiconductor channel. Hydrogen or deuterium from a dielectric core may then be outdiffused into the semiconductor channel.