Company Filing History:
Years Active: 2016-2017
Title: Wenguang Shi: Innovator in Memory Device Technology
Introduction
Wenguang Shi is a prominent inventor based in Milpitas, California, known for his significant contributions to memory device technology. With a total of eight patents to his name, he has made remarkable advancements in the field of multilevel memory stack structures.
Latest Patents
One of Wenguang Shi's latest patents is titled "Method of making a multilevel memory stack structure using a cavity containing a sacrificial fill material." This innovative method involves forming a three-dimensional memory device by creating a lower stack structure of insulating and sacrificial material layers over a substrate. The process includes forming memory openings and replacing sacrificial materials with electrically conductive layers, ultimately leading to the formation of memory stack structures within inter-stack memory openings.
Another notable patent is the "Multi-tier replacement memory stack structure integration scheme." This patent describes a method for forming memory openings through a multiple tier structure, which includes alternating stacks of sacrificial material layers and insulating layers. The technique allows for the creation of backside recesses and the formation of a memory stack structure that includes charge storage regions and a semiconductor channel.
Career Highlights
Wenguang Shi has established himself as a key figure in the field of memory technology through his work at SanDisk Technologies Inc. His innovative approaches and patented methods have contributed to advancements in memory device performance and efficiency.
Collaborations
Wenguang has collaborated with notable colleagues such as Zhenyu Lu and Johann Alsmeier, further enhancing the innovative environment at SanDisk Technologies Inc.
Conclusion
Wenguang Shi's contributions to memory device technology through his patents and work at SanDisk Technologies Inc. highlight his role as a leading inventor in the field. His innovative methods continue to shape the future of memory technology.
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