The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2016
Filed:
Jan. 13, 2016
Sandisk Technologies Inc., Plano, TX (US);
Koji Miyata, Yokkaichi, JP;
Zhenyu Lu, Milpitas, CA (US);
Andrew Lin, San Jose, CA (US);
Daxin Mao, Cupertino, CA (US);
Jixin Yu, Yokkaichi, JP;
Johann Alsmeier, San Jose, CA (US);
Wenguang Stephen Shi, Milpitas, CA (US);
SANDISK TECHNOLOGIES LLC, Plano, TX (US);
Abstract
A method of fabricating a memory device is provided. The method includes forming a first alternating stack of insulator layers and spacer material layers over a semiconductor substrate, etching the first alternating stack to expose a single crystalline semiconductor material, forming a first epitaxial semiconductor pedestal on the single crystalline semiconductor material, such that the first epitaxial semiconductor pedestal is in epitaxial alignment with the single crystalline semiconductor material, forming an array of memory stack structures through the first alternating stack, and forming at least one semiconductor device over the first epitaxial semiconductor pedestal.