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Tainan, Taiwan

Yu-Sheng Wang

This inventor holds 57 USPTO granted patents and 4 published patent applications, primarily in FinFET Technology (CPC class H01L). Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2008-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yu-Sheng Wang. Retrieved from https://idiyas.com/inventor/yu-sheng-wang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 57 

% Patents Active = 89.5

Average Co-Inventor Count = 4.8

ph-index = 6

Forward Citations = 100(Granted Patents)

Forward Citations (Not Self Cited) = 88(Dec 10, 2025)


Inventors with similar research interests:


Company Filing History:

goldMedal57 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2008-2025

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Areas of Expertise:
FinFET Structures
Semiconductor Device
Low Resistance Contact
CMOS Technology
Tantalum Nitride
Copper Layer Formation
Electroplating Method
Dielectric Spacer
Metal Gate
Contact Plugs
Corrosion Reduction
Wafers Purging
57 patents (USPTO):Explore Patents
1. 12507458 - Semiconductor device with dielectric spacer liner on source/drain contact (2025-12-23),
2. 12356656 - FinFET structures and methods of forming the same (2025-07-08),
3. 12300729 - Low resistant contact method and structure (2025-05-13),
4. 12068197 - Methods for forming contact plugs with reduced corrosion (2024-08-20),
5. 12065731 - Tungsten deposition on a cobalt surface (2024-08-20),
6. 12021147 - FinFET structures and methods of forming the same (2024-06-25),
7. 11961768 - CMOS FinFET structures including work-function materials having different proportions of crystalline orientations and methods of forming the same (2024-04-16),
8. 11955379 - Metal adhesion layer to promote metal plug adhesion (2024-04-09),
9. 11682589 - CMOS finFET structures including work-function materials having different proportions of crystalline orientations and methods of forming the same (2023-06-20),
10. 11670690 - Semiconductor device with dielectric spacer liner on source/drain contact (2023-06-06),
11. 11616132 - Semiconductor device and methods of manufacture (2023-03-28),
12. 11563120 - FinFET structures and methods of forming the same (2023-01-24),
13. 11271103 - Semiconductor device and manufacturing process thereof (2022-03-08),
14. 11043573 - Method of fabricating tantalum nitride barrier layer and semiconductor device thereof (2021-06-22),
15. 11031486 - Semiconductor device and methods of manufacture (2021-06-08),

Title: The Innovative Journey of Yu-Sheng Wang

Introduction: Yu-Sheng Wang, a pioneering inventor hailing from Tainan, Taiwan, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Wang's latest patents include a cutting-edge AI-powered healthcare device designed to revolutionize patient care, a sustainable energy solution utilizing solar power, and a novel communication system for seamless connectivity.

Career Highlights: With a career spanning over two decades, Wang has established himself as a visionary inventor with a keen eye for identifying gaps in the market and developing innovative solutions. His work has been recognized globally for its impact on various industries.

Collaborations: Throughout his career, Wang has collaborated with leading technology companies, research institutions, and universities to further enhance his inventions. His collaborative efforts have resulted in the successful implementation of cutting-edge technologies in real-world applications.

Conclusion: Yu-Sheng Wang's relentless pursuit of innovation and his passion for creating solutions to complex challenges have solidified his position as a prominent figure in the world of inventors. His contributions continue to inspire future generations of inventors to push the boundaries of what is possible in the realm of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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