The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2023
Filed:
Jul. 11, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chi-Cheng Hung, Tainan, TW;
Kei-Wei Chen, Tainan, TW;
Yu-Sheng Wang, Tainan, TW;
Ming-Ching Chung, Tainan, TW;
Chia-Yang Wu, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a semiconductor substrate, a gate structure, a first source/drain region, a second source/drain region, first source/drain contact and a first dielectric spacer liner. The gate structure is over the semiconductor substrate. The first source/drain region and the second source/drain region are in the semiconductor substrate and respectively on opposite sides of the gate structure. The first source/drain contact is over the first source/drain region. The first dielectric spacer liner lines a sidewall of the first source/drain contact and extends into the first source/drain region.