The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2022
Filed:
Sep. 21, 2020
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Pohan Kung, Tainan, TW;
Ying-Jing Lu, Kaohsiung County, TW;
Chi-Cheng Hung, Tainan, TW;
Yu-Sheng Wang, Tainan, TW;
Shiu-Ko Jangjian, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A method of manufacturing a semiconductor device includes: providing a substrate; forming a gate structure on the substrate; depositing a first dielectric layer over the gate structure; depositing a conductive interconnect in a trench of the first dielectric layer thereby exposing a surface of the conductive interconnect through the first dielectric layer; depositing a conductive layer over the exposed surface of the conductive interconnect; depositing a silicon-containing layer over the conductive layer and the conductive interconnect; and forming a metal silicide layer to be a silicide form of the conductive layer by reacting the conductive layer with silicon in the silicon-containing layer.