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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11031486 B1

PDFFull Text
Date of Patent:
Jun. 08, 2021

Filed:

Nov. 21, 2019

Semiconductor device and methods of manufacture

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yu-Sheng Wang, Tainan, TW;

Chi-Cheng Hung, Tainan, TW;

Chia-Ching Lee, New Taipei, TW;

Ching-Hwanq Su, Tainan, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Joseph C Nicely

Assistant Examiner:

Lamont B Koo

Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 21/28 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 21/28088 (2013.01); H01L 21/76224 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/4958 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01); H01L 29/518 (2013.01);
Abstract

A semiconductor device and method of manufacturing are provided. In an embodiment a first nucleation layer is formed within an opening for a gate-last process. The first nucleation layer is treated in order to remove undesired oxygen by exposing the first nucleation layer to a precursor that reacts with the oxygen to form a gas. A second nucleation layer is then formed, and a remainder of the opening is filled with a bulk conductive material.

Find Patent Forward Citations

Wang, Yu-Sheng. (2021). Semiconductor device and methods of manufacture (U.S. Patent No. 11031486). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11031486

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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