The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2021
Filed:
Nov. 21, 2019
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Yu-Sheng Wang, Tainan, TW;
Chi-Cheng Hung, Tainan, TW;
Chia-Ching Lee, New Taipei, TW;
Ching-Hwanq Su, Tainan, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 21/28 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 21/28088 (2013.01); H01L 21/76224 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/4958 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01); H01L 29/518 (2013.01);
Abstract
A semiconductor device and method of manufacturing are provided. In an embodiment a first nucleation layer is formed within an opening for a gate-last process. The first nucleation layer is treated in order to remove undesired oxygen by exposing the first nucleation layer to a precursor that reacts with the oxygen to form a gas. A second nucleation layer is then formed, and a remainder of the opening is filled with a bulk conductive material.