The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2025
Filed:
Apr. 28, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chi-Cheng Hung, Tainan, TW;
Kei-Wei Chen, Tainan, TW;
Yu-Sheng Wang, Tainan, TW;
Ming-Ching Chung, Tainan, TW;
Chia-Yang Wu, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a source/drain region, a silicide region, a source/drain contact, and a silicon-containing dielectric liner. The source/drain region is in a substrate. The silicide region is embedded in the source/drain region. The source/drain contact is over the silicide region. The silicon-containing dielectric liner surrounds the source/drain contact. The source/drain region is in contact with an outer sidewall of the silicon-containing dielectric liner but separated from a bottom surface of the silicon-containing dielectric liner by the silicide region.