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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12300729 B1

PDFFull Text
Date of Patent:
May. 13, 2025

Filed:

Dec. 16, 2019

Low resistant contact method and structure

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yu-Sheng Wang, Tainan, TW;

Yu-Ting Lin, Tainan, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Sophia T Nguyen

Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 21/02 (2006.01); H01L 21/261 (2006.01); H01L 21/263 (2006.01); H01L 21/285 (2006.01); H01L 21/322 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41791 (2013.01); H01L 21/02063 (2013.01); H01L 21/261 (2013.01); H01L 21/2633 (2013.01); H01L 21/28518 (2013.01); H01L 21/3221 (2013.01); H01L 21/76814 (2013.01); H01L 21/76843 (2013.01); H01L 21/76855 (2013.01); H01L 21/76889 (2013.01); H01L 21/76897 (2013.01); H01L 21/823431 (2013.01); H01L 21/823468 (2013.01); H01L 21/823475 (2013.01); H01L 27/088 (2013.01); H01L 29/456 (2013.01); H01L 29/6656 (2013.01); H01L 29/66795 (2013.01); H01L 21/26506 (2013.01); H01L 21/76804 (2013.01); H01L 21/823425 (2013.01); H01L 29/665 (2013.01); H01L 29/6653 (2013.01); H01L 29/66545 (2013.01); H01L 29/7845 (2013.01); H01L 29/7855 (2013.01);
Abstract

A device includes a metal-silicide region formed in a semiconductor material in a contact opening. A concentration of a material, including chlorine, fluorine, or a combination thereof is in the metal-silicide region near an uppermost surface of the metal-silicide region. The presence of chlorine or fluorine results from a physical bombarding of the chlorine or fluorine in the contact opening. As a result of the physical bombard, the opening becomes wider at the bottom of the opening and the sidewalls of the opening are thinned. A capping layer is over the metal-silicide region and over sidewalls of a contact plug opening. A contact plug is formed over the capping layer, filling the contact plug opening. Before the contact plug is formed, a silicidation occurs to form the metal-silicide and the metal-silicide is wider than the bottom of the opening.

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