Kanagawa, Japan

Yoshihisa Matsubara

This inventor holds 65 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Devices (CPC class H01L). Top assignees: Nec Corporation, Renesas Electronics Corporation, Nec Electronics Corporation. Active years: 1996-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshihisa Matsubara. Retrieved from https://idiyas.com/inventor/yoshihisa-matsubara

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 65 

% Patents Active = 81.5

Average Co-Inventor Count = 1.3

ph-index = 9

Forward Citations = 324(Granted Patents)

Forward Citations (Not Self Cited) = 316(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Tokyo, JP (1996 - 2006)
  • Tsukuba-shi, JP (2008)
  • Tsukuba, JP (2008 - 2010)
  • Sagamihara, JP (2009 - 2010)
  • Kawasaki, JP (2010)
  • Kanagawa, JP (2005 - 2014)
  • Kanawasaki, JP (2015)
  • Ibaraki, JP (2009 - 2019)
  • Hitachinaka, JP (2018 - 2019)

Company Filing History:


Years Active: 1996-2019

Loading Chart...
Areas of Expertise:
Semiconductor Device
Manufacturing Method
Integrated Circuit
Wiring Structure
Copper Wiring
Multilayer Structure
Displacement Detection
Low-K Dielectric
Alloy Film
Chemical Mechanical Polishing
Interconnects
65 patents (USPTO):Explore Patents

Title: Yoshihisa Matsubara: A Pioneer in Semiconductor Innovations

Introduction: Yoshihisa Matsubara, based in Kanagawa, Japan, is an accomplished inventor known for his significant contributions to the field of semiconductor technology. With an impressive portfolio of 65 patents, his work focuses on enhancing semiconductor device performance and manufacturing methods.

Latest Patents: Among Yoshihisa Matsubara's latest innovations are patents related to semiconductor devices and their manufacturing methods. One notable patent details an improved performance of a semiconductor device that comprises Metal-Insulator-Semiconductor Field-Effect Transistors (MISFETs) integrated into a substrate. This design includes multiple stacked wiring layers and plugs that connect the layers, ensuring efficient performance without any overlap of the plugs over a specified opening. Another inventive patent highlights advancements in higher-breakdown-voltage MISFETs, where the design modifications enhance the breakdown voltage while maintaining a compact area for the transistors. These contributions signify Matsubara's dedication to evolving semiconductor technologies.

Career Highlights: Throughout his distinguished career, Yoshihisa Matsubara has collaborated with leading companies such as NEC Corporation and Renesas Electronics Corporation. His experience in these influential organizations has fueled his innovation drive and helped him establish himself as a key player in the semiconductor landscape.

Collaborations: Matsubara's work environment has fostered collaboration with talented individuals, including notable coworkers such as Manabu Iguchi and Takashi Ishigami. These partnerships highlight the synergistic relationships that often exist in tech innovation, enabling ideas to flourish and lead to groundbreaking inventions.

Conclusion: Yoshihisa Matsubara's footprint in the realm of semiconductor innovation is marked by a profound understanding of technology and a commitment to advancing device performance. His numerous patents illustrate his pioneering spirit and aim towards excellence in the semiconductor field, ultimately contributing to the future of electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…