The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2014
Filed:
Feb. 28, 2011
Applicant:
Yoshihisa Matsubara, Kanagawa, JP;
Inventor:
Yoshihisa Matsubara, Kanagawa, JP;
Assignee:
Renesas Electronics Corporation, Kawasaki-Shi, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/428 (2006.01);
U.S. Cl.
CPC ...
Abstract
An MTJ element is formed in a wiring layer located in a lower tier and yet application of heat to the MTJ element is suppressed. A first insulating layer is formed over a substrate. Subsequently, the MTJ element is formed over the first insulating layer. After that a first wiring is formed over the MTJ element. Thereafter, a second insulating layer is formed over the first wiring. Then a second wiring is formed in the superficial layer of the second insulating layer. The second wiring is heat treated by photoirradiation. A shield conductor is formed at the step of forming the second wiring.